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Publikationen in Fachzeitschriften

  1. Assembly for Rutherford backscattering at exactly 180°
    H. Ellmer, W. Fischer, A. Klose and D. Semrad
    Rev. Sci. Instrum. 67, 1794 (1996)
  2. Deconvolution of Rutherford backscattering spectra - an inverse problem
    H. Ellmer and D. Semrad
    Phys. Rev. E 54, 3569 (1996)
  3. Experimental findings in 180° backscattering enhancement from solids
    H. Ellmer, W. Fischer, A. Klose and D. Semrad
    Phys. Rev. B 55, 2867 (1997)
  4. Optically active Si:Er layers grown by the sublimational MBE method
    M. Stepikhova, A. Andreev, B. Andreev, Z. Krasilnik, V. Shmagin, V. Kuznetsov, R. Rubtsova, W. Jantsch, H. Ellmer, L. Palmetshofer, H. Preier, Yu. Karpov, K. Piplits, and H. Hutter
    Acta Physica Polonica A 94, 549 (1998)
  5. Optical Er-doping of Si during sublimational molecular beam epitaxy
    B. Andreev, A. Andreev, H. Ellmer, H. Hutter, Z. Krasilnik, V. Kuznetsov, S. Lanzerstorfer, L. Palmetshofer, K. Piplits, R. Rubtsova, N. Sokolov, V. Shmagin, M. Stepikhova, and E. Uskova
    J. Cryst. Growth, 201/202, 534 (1999)
  6. Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy
    A. Yu. Andreev, B. A. Andreev, M. N. Drozdov, H. Ellmer, V. P. Kuznetsov, N.G. Kalugin, Z. F. Kra-silnik, Yu. A. Karpov, L. Palmetshofer, K. Piplitz, R. A. Rubtsova, M. V. Stepikhova, E. A. Uskova, V. B. Shmagin, and H. Hutter
    Bulletin of the Russian Academie of Science 63, 392 (1999)
  7. Optically active layers of silicon doped by erbium during sublimational molecular beam epitaxy
    A. Andreev, B. Andreev, M. Drozdov, V. Kuznetsov, Z. Krasilnik, Yu. Karpov, R. Rubtsova, M. Ste-pikhova, E. Uskova, V. Shmagin, H. Ellmer, L. Palmetshofer, K. Piplitz, and H. Hutter
    Semiconductors 33, 131 (1999)
  8. Upgrading RBS analysis of single crystals by application of triple correlation
    H. Ellmer, R. Aichinger, and D. Semrad
    CAARI98, AIP Conference Proceedings, 496 (1999)
  9. Determination of crystal lattice defects by investigation of the channeling shoulder
    H. Ellmer, R. Aichinger, S. Mäser, and D. Semrad
    Nucl. Instr. and Meth. B 155, 479 (1999)
  10. Crystal adjustment by means of blocking patterns
    H. Ellmer, R. Aichinger, E. Winkler, D. Semrad, V. Mergel, and O. Jagutzki
    Rev. Sci. Instrum. 71, 2693 (2000)
  11. Properties of optically active Si:Er and Si1-xGex layers grown by the sublimation MBE method
    M. V. Stepikhova, B. A. Andreev, V. B. Shmagin, Z. F. Krasilnik, V. P. Kuznetsov, V. G. Shengurov, S. P. Svetlov, W. Jantsch, L. Palmetshofer, and H. Ellmer
    Thin Film Solids 369, 426 (2000), Thin Solid Films 381, 164 (2001)
  12. Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy
    S. P. Svetlov, V. Yu. Chalkov, V. G. Shengurov, E. A. Uskova, G. A. Maximov, B. A. Andreev, Z. F. Krasilnik, M. V. Stepikhova, and H. Ellmer
    Techn. Phys. Lett. 26, 41 (2000)
  13. Self-ordering in two dimensions: nitrogen adsorption on copper (100) followed by STM at elevated temperature
    H. Ellmer, V. Repain, S. Rousset, B. Croset, M. Sotto, and P. Zeppenfeld
    Surf. Sci. 476, 95 (2001)
  14. The influence of the growth conditions on building-up processes of the rare earth dopants during molecular beam epitaxy
    V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maximov, Z. F. Krasilnik, B. A. Andreev, M. V. Stepikhova, L. Palmetshofer, and H. Ellmer
    Bulletin of the Russian Academie of Science 65, 289 (2001)
  15. Simultaneous Doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
    V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maximov, Z. F. Krasilnik, B. A. Andreev, M. V. Stepikhova, L. Palmetshofer, and H. Ellmer
    Semiconductors 35, 918 (2001)
  16. Surface relaxation and near surface atomic displacements in the N/Cu (100) self-ordered system
    C. Cohen, H. Ellmer, J.M. Guigner, A. L'Hoir, G. Prévot, D. Schmaus and M. Sotto
    Surf. Sci. 490, 336 (2001)
  17. Pre-structured metallic template for the growth of ordered, square-based nanodots
    H. Ellmer,V. Repain, M. Sotto, and S. Rousset
    Surf. Sci. 511, 183 (2002)
  18. Nuclear fission time measurements as a function of excitation energy: A crystal blocking experiment
    F. Barrué, S. Basnary, A. Chbihi, M. Chevallier, C. Cohen, D. Dauvergne, H. Ellmer, J. Frankland, D. Jacquet, R. Kirsch, P. Lautesse, A. L'Hoir, M. Morjean, J.-C. Poizat, C. Ray and M. Toulemonde
    NIM B 193, 852 (2002)
  19. Two-dimensional long-range-ordered growth of uniform cobalt nanostructures on a Au(111) vicinal template
    V. Repain, G. Baudot, H. Ellmer, and S. Rousset
    Europhys. Lett. 58, 730 (2002)
  20. Self-ordering on crystal surfaces: fundamentals and applications
    S. Rousset, V. Repain, G. Baudot, H. Ellmer, Y. Garreau, V. Etgens, J. M. Berroir, B. Croset, M. Sotto, P. Zeppenfeld, J. Ferré, J. P. Jamet, C. Chappert and J. Lecoeur
    Mat. Sci. and Eng. B 96, 169 (2002)
  21. Ordered growth of cobalt nanostructures on a Au(111) vicinal surface: nucleation mechanisms and temperature behavior
    V. Repain, G. Baudot, H. Ellmer and S. Rousset,
    Mat. Sci. and Eng. B 96, 178 (2002)
  22. Low-temperature phases of Xe on Pd(111)
    J. Zhu, H. Ellmer, H. Malissa, T. Brandstetter, D. Semrad, P. Zeppenfeld
    Phys. Rev. B 68, 45406 (2003)
  23. Temperature dependence of ordered cobalt nanodots growth on Au(788)
    G. Baudot, S. Rohart, V. Repain, H. Ellmer, Y. Girard and S. Rousset
    Appl. Surf. Sci. 212-213, 360 (2003)